Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 80A 463000mW 12Pin MTP25651+$748.587810+$722.321650+$719.0383100+$715.7550150+$710.5018250+$705.9052500+$701.30861000+$696.0554 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 100A 347000mW 7Pin MTP92651+$396.150910+$385.816550+$377.8935100+$375.1376200+$373.0708500+$370.31491000+$368.59252000+$366.8701 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 61A 216000mW 19Pin EMIPAK-1B PressFit5166 -
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Category: IGBTtransistorDescription: EMIPAK-2B PRESSFIT POWER MODULE 3-LEVELS HALF-BRIDGE INVERTER STAGE, 150A4142 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 500A 1645000mW 5Pin Double INT-A-PAK36521+$1268.737810+$1257.203825+$1251.436850+$1245.6698100+$1239.9029150+$1234.1359250+$1228.3689500+$1222.6019 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 200A 1136000mW 7Pin Double INT-A-PAK39161+$2781.553510+$2756.266725+$2743.623250+$2730.9798100+$2718.3364150+$2705.6930250+$2693.0495500+$2680.4061 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 800A 2604000mW 7Pin Double INT-A-PAK83601+$2043.247810+$2024.672825+$2015.385350+$2006.0978100+$1996.8104150+$1987.5229250+$1978.2354500+$1968.9479 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 650A 2500000mW 4Pin Double INT-A-PAK28941+$3640.698610+$3607.601325+$3591.052750+$3574.5041100+$3557.9555150+$3541.4068250+$3524.8582500+$3508.3096 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 100A 405000mW 7Pin INT-A-PAK9484 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 138A 500000mW 7Pin INT-A-PAK62971+$642.983910+$620.423150+$617.6030100+$614.7829150+$610.2707250+$606.3226500+$602.37441000+$597.8623 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.62251+$404.849510+$394.288250+$386.1912100+$383.3748200+$381.2626500+$378.44621000+$376.68602000+$374.9258 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 85A 208000mW 7Pin INT-A-PAK78571+$1147.977610+$1137.541425+$1132.323450+$1127.1053100+$1121.8872150+$1116.6691250+$1111.4510500+$1106.2330 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 109A 4Pin SOT-22782351+$181.227410+$176.499750+$172.8751100+$171.6144200+$170.6689500+$169.40821000+$168.62022000+$167.8323 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 341A 1042000mW 11Pin Double INT-A-PAK95961+$1373.832910+$1361.343525+$1355.098850+$1348.8541100+$1342.6094150+$1336.3647250+$1330.1200500+$1323.8753 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 337A 781000mW 7Pin INT-A-PAK62971+$333.227510+$324.534650+$317.8700100+$315.5519200+$313.8133500+$311.49521000+$310.04642000+$308.5976 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 420A 1562000mW 5Pin Double INT-A-PAK52571+$2850.365110+$2824.452725+$2811.496550+$2798.5403100+$2785.5841150+$2772.6279250+$2759.6717500+$2746.7155 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 530A 1600000mW 7Pin Double INT-A-PAK9035 -
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Category: IGBTtransistorDescription: Insulated gate bipolar transistor (ultra fast speed) IGBT ） ， 100 A Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A52721+$442.464810+$430.922250+$422.0729100+$418.9949200+$416.6864500+$413.60841000+$411.68462000+$409.7609 -
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Category: IGBTtransistorDescription: IGBT SIPModule (Ultrafast IGBT) IGBT SIP Module (Ultrafast IGBT)8469 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 200A 833000mW 7Pin Double INT-A-PAK9853 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.85731+$368.284110+$358.676650+$351.3110100+$348.7490200+$346.8275500+$344.26551000+$342.66432000+$341.0631 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.84091+$638.403410+$616.003350+$613.2033100+$610.4033150+$605.9232250+$602.0032500+$598.08321000+$593.6032 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.18101+$2699.885110+$2675.340725+$2663.068550+$2650.7963100+$2638.5241150+$2626.2519250+$2613.9797500+$2601.7075 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.61431+$157.466110+$153.358250+$150.2089100+$149.1135200+$148.2919500+$147.19651000+$146.51192000+$145.8273 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.16231+$1181.117310+$1170.379925+$1165.011250+$1159.6424100+$1154.2737150+$1148.9050250+$1143.5363500+$1138.1676
